یک سلول خورشیدی با نقاط کوانتومی InAs تعبیه شده در چاه‌های کوانتومی AlGaAs/GaAs – کامسول

This example shows an approximate approach to model a dot-in-well solar cell as described by Asahi et al. in the reference paper. The quantum wells and the layers of quantum dots are each treated as lumped energy levels in the band gap. The authors specify transitions between the dot/well levels and the energy bands. The continuum part of the current density is otherwise unimpeded by the wells and dots. This description is equivalent to the trapping feature in the Semiconductor interface, so it is used to model the wells and dots in this example. The computed trend of the photocurrent and occupancy of the quantum dot states agrees well with the result shown in the paper.