روش k·p برای ساختار نواری Wurtzite GaN – کامسول

This benchmark model computes the valence band structure of an unstrained and a strained bulk GaN wurtzite crystal, as a tutorial for users who wish to set up multiple wave function components with the Schrödinger Equation interface. The model follows the formulation given in the reference paper by Chuang and Chang. The diagonal and off-diagonal elements of the Hamiltonian matrix are entered using built-in features, with detailed instructions in the model documentation. The computed eigenvalues agree well with the analytic solution and Fig. 5 in the paper.